Part Number Hot Search : 
2SB15 PMB6821 SD1602H MM74HC GP1A40 3205C CB1608 223ML
Product Description
Full Text Search

MRFE6VP61K25HR6 - RF Power Field Effect Transistors High Ruggedness N--Channel Enhancement--Mode

MRFE6VP61K25HR6_4980234.PDF Datasheet


 Full text search : RF Power Field Effect Transistors High Ruggedness N--Channel Enhancement--Mode


 Related Part Number
PART Description Maker
PSMN005-75P PSMN005-75B PSMN005_75P_75B-01 N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. 75 A, 75 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
From old datasheet system
N-channel enhancement mode field-effect transistor
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
RFH35N10 RFH35N08 POWER MOS FIELD - EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS
List of Unclassifed Manufacturers
ETC[ETC]
IRFF120 IRFF121 IRFF122 IRFF123 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A.
N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
General Electric Solid State
GE Solid State
IRFF110 IRFF111 IRFF112 IRFF113 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.
Power MOS Field-Effect Transistors
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
General Electric Solid State
GE Solid State
SSM3J01T Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Toshiba Semiconductor
SSM3J02F 600 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
SSM3J13T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Power Management Switch High Speed Switching Applications
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
MRF18085B MRF18085BLSR3 MRF18085BR3 RF Power Field Effect Transistors
Motorola, Inc.
MOTOROLA[Motorola, Inc]
MRF5S21045 MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045 RF Power Field Effect Transistors
FREESCALE[Freescale Semiconductor, Inc]
MRF8S18210WHS MRF8S18210WGHSR3 MRF8S18210WHSR3 RF Power Field Effect Transistors
Freescale Semiconductor, Inc
MTP6N10 POWER FIELD EFFECT TRANSISTOR
MOTOROLA[Motorola, Inc]
UFT150-28 RF POWER FIELD-EFFECT TRANSISTOR
Advanced Semiconductor, Inc.
 
 Related keyword From Full Text Search System
MRFE6VP61K25HR6 Bit MRFE6VP61K25HR6 Price MRFE6VP61K25HR6 cmos MRFE6VP61K25HR6 rectifier MRFE6VP61K25HR6 schottky
MRFE6VP61K25HR6 Description MRFE6VP61K25HR6 memory MRFE6VP61K25HR6 资料查找 MRFE6VP61K25HR6 controller MRFE6VP61K25HR6 m85049
 

 

Price & Availability of MRFE6VP61K25HR6

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
1.6744201183319